ScholarWorks@경상국립대학교

초록

Microscale light-emitting diodes (mu LEDs) have been extensively employed for solid-state lighting applications. However, the ratio of the sidewall area to the emitting area increases as the pixel size of mu LEDs decreases, which increases the non-radiative recombination probability on the sidewall surface and eventually degrades the performance of mu LEDs. In this study, we investigate the nature of chemical bonds at the sidewall/passivation layer interface using three passivation materials (SiO2, Al2O3, and Si3N4), to identify the underlying mechanism of passivation and thereby achieve high-performance InGaN-based mu LEDs. According to the X-ray photoelectron spectroscopy results, the ratio of Ga-O bonds on the sidewall/passivation layer interface to Ga-N bonds varies with the passivation layer (1.1, 1.06, and 0.33 for SiO2, Al2O3, and Si3N4, respectively). This amount is a key factor affecting the passivation and directly influences the mu LED performance. The mu LED with SiO2 passivation exhibits a 39% higher light output power and 192% higher current density compared to those associated with the mu LED with Si3N4 passivation. These results indicate that the suppression of non-radiative defects depends on the chemical states at the sidewall/passivation layer interface. The findings can provide guidance for optimizing the device performance of mu LEDs by selecting appropriate passivation layers.

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