뉴로모픽 응용을 위한 이중 모드 멤리스터의 단기 및장기 기억 특성 구현

초록

This study presents a new type of dual-mode memristor capable of selectively operating in either ferroelectric(FM) or resistive (RM) switching modes within a single physical device, depending on the applied voltage conditions. The FM mode demonstrates polarization-driven short-term memory (STM), whereas the RM mode exhibits filamentarylong-term memory (LTM). Synaptic plasticity in both modes was quantified using EPSC-based metrics, confirmingthe superior short-term facilitation of FM. The device was further applied to MLP and reservoir computing systems,achieving MNIST classification accuracies of 95.14 % and 94.2 %, respectively. These results highlight the potentialof the proposed device as a multifunctional neuromorphic platform capable of simultaneously supporting STM-LTMdynamics and diverse neural network operations.

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