상세 보기
Transport reconstruction across a p-to-n polarity crossover in lone-pair-matched Bi/Sb co-doped Pb0.5Sn0.5Te
- Lee, Gwan Hyeong;
- Kim, Se Yun;
- Kim, Yunjae;
- Park, Jaewoo;
- Kim, Sang-Il;
- 외 1명
WEB OF SCIENCE
0SCOPUS
0초록
Bi/Sb co-doping was introduced into p-type Pb0.5Sn0.5Te to examine how lone-pair-matched cation-site substitution reconstructs carrier transport across a p-to-n polarity crossover using Bi3+ (6s2) and Sb3+ (5s2). X-ray diffraction and X-ray photoelectron spectroscopy confirmed incorporation of Bi and Sb while preserving the host rock-salt crystal structure over the investigated composition range of x = 0 – 0.04 in Pb0.5-xBixSn0.5-xSbxTe. Hall and thermoelectric transport measurements showed that increasing x systematically drives the system from p-type to n-type conduction, with the crossover occurring between x = 0.01 and 0.02. Among the investigated compositions, x = 0.01 showed the most favorable transport balance, whereas further co-doping caused a pronounced deterioration in mobility, power factor, and thermoelectric figure of merit zT after polarity reversal. Thermal transport analysis further showed that the total thermal conductivity decreased from about 2.92 W/mK for x = 0 to about 0.95 W/mK for x = 0.04 at 300 K, mainly because of suppression of the electronic contribution, while the estimated lattice thermal conductivity displayed a non-monotonic composition dependence. Density functional theory calculations for both the pristine host and a Bi/Sb co-doped supercell revealed an intrinsic asymmetry between the valence-band-side and conduction-band-side electronic structures near the Fermi level. In the co-doped supercell, the Fermi level is displaced across the gap into the conduction band, where the projected density of states is substantial, indicating that the additional electrons occupy conduction-side states. This calculated band-edge asymmetry is consistent with the experimentally observed deterioration of the intrinsic mobility and transport quality after the system enters the n-type branch. These results suggest that Bi/Sb co-doping serves not only as a carrier-tuning route but also as a sensitive probe of transport reconstruction in this narrow-gap chalcogenide and that the host electronic structure is intrinsically more favorable for p-type than for n-type charge transport. © 2026
키워드
- 제목
- Transport reconstruction across a p-to-n polarity crossover in lone-pair-matched Bi/Sb co-doped Pb0.5Sn0.5Te
- 저자
- Lee, Gwan Hyeong; Kim, Se Yun; Kim, Yunjae; Park, Jaewoo; Kim, Sang-Il; Kwon, Myoung Seok
- 발행일
- 2027-03
- 유형
- Article
- 권
- 219
- 언어
- ENG
- 출판사
- Elsevier Ltd
- 발행국가
- 영국
- ISSN
- E 1873-4081
P 1369-8001