Record High Hole Mobility in Polymer Semiconductors via Side-Chain Engineering

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초록

Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V.s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short pi-pi stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.

키워드

COPOLYMERAMBIPOLARSELENOPHENETRANSISTORS
제목
Record High Hole Mobility in Polymer Semiconductors via Side-Chain Engineering
저자
Kang, IlYun, Hui-JunChung, Dae SungKwon, Soon-KiKim, Yun-Hi
DOI
10.1021/ja405112s
발행일
2013-10
유형
Article
저널명
Journal of the American Chemical Society
135
40
페이지
14896 ~ 14899