Multimode Operation of Light-Gated Transistors Based on Millimeter-Scale Transition-Metal Dichalcogenide Grown by Chemical Vapor Deposition
  • Kundale, Somnath S.
  • Kim, Hyeongtae
  • Kumbhar, Dhananjay D.
  • Oh, Chang-Hwan
  • Cho, Su-Yeon
  • ... Park, Jun Hong
  • 외 5명
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초록

The operation of conventional transistors involves electrostatically gated control over the deposited dielectric layers; however, the integration of electric gating into optoelectrical transistors can result in thermal noise or fabrication complexity. Herein, chemical-vapor-deposition-grown millimeter-scale WSe2 flakes were used to construct light-gated transistors (LGTs) suitable for single-device logic operations. Different LGT behaviors were observed at above- and below-threshold light-gating powers upon different pulse modulations: the LGTs exhibited high sensitivity and cycling stability within a broad range of operating frequencies at a below-threshold light power. Light-gated logic above-threshold power enabled single-device logic operations under simultaneous electric and light gating, whereas a transition to light-triggered synaptic operation occurred for laser pulse modulation under above-threshold light. In the synaptic mode, the LGTs mimicked bioinspired synaptic functionalities suitable for neuromorphic computing, thus holding promise for the fabrication of optically operated in-sensor computing hardware that exhibits multifunctionality suitable for the realization of multimodal interfaces and artificial intelligence. © 2024 American Chemical Society.

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2-DIMENSIONAL MATERIALSWSE2FUTURELAYERMOS2HOLEWS2
제목
Multimode Operation of Light-Gated Transistors Based on Millimeter-Scale Transition-Metal Dichalcogenide Grown by Chemical Vapor Deposition
저자
Kundale, Somnath S.Kim, HyeongtaeKumbhar, Dhananjay D.Oh, Chang-HwanCho, Su-YeonKwon, Mi JiShim, SoobinKim, WonbeomMukherjee, ShaibalKim, Sun W.Park, Jun Hong
DOI
10.1021/acsmaterialslett.3c01548
발행일
2024-07
유형
Article
저널명
ACS Materials Letters
6
8
페이지
3384 ~ 3393