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Mechanical stability of Si thin film deposited on a Ti-50.3Ni(at%) alloy
- Kim, Bo-min;
- Cho, Gyu-bong;
- Noh, Jung-pil;
- Ahn, Hyo-jun;
- Choi, Eun-soo;
- 외 2명
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8초록
Silicon thin film annealed at 973 K for 7 2 ks after being deposited on a Ti-50.3Ni(at%) substrate was not detached from the substrate after 2 2% tensile deformation, which was ascribed to a diffusion bonding between the Si film and substrate. The B2-B19' transformation start temperature (M(s)) of the Ti-Ni substrate with Si thin film increased by annealing, which was ascribed to a tensile stress developed by the difference in thermal expansion coefficient between the Si film and substrate (C) 2010 Elsevier B.V. All rights reserved
키워드
Shape memory alloys (SMA); Coating; Silicon thin film; Tension test; Martensitic phase transformation; Anode; LI-ION BATTERIES; NI; SILICON; ANODE; TRANSFORMATION; ELECTRODE; SYSTEM
- 제목
- Mechanical stability of Si thin film deposited on a Ti-50.3Ni(at%) alloy
- 저자
- Kim, Bo-min; Cho, Gyu-bong; Noh, Jung-pil; Ahn, Hyo-jun; Choi, Eun-soo; Miyazaki, Shuichi; Nam, Tae-hyun
- 발행일
- 2010-05-14
- 유형
- Article
- 권
- 497
- 호
- 1-2
- 페이지
- L13 ~ L16
- 언어
- ENG
- 출판사
- ELSEVIER SCIENCE SA
- 발행국가
- 스위스
- ISSN
- E 1873-4669
P 0925-8388