상세 보기
Shape memory effect-induced crack closure in Si thin film deposited on a Ti-50.3Ni (at%) alloy substrate
- Cho, Gyu-bong;
- Kim, Bo-min;
- Choi, Hee-jin;
- Noh, Jung-pil;
- Choi, Si-young;
- ... Ahn, Hyo-jun;
- 외 2명
Citations
WEB OF SCIENCE
7Citations
SCOPUS
6초록
Cracks developed by tensile loading in the Si thin film deposited on the Ti-50.3Ni (at%) substrate were closed by the shape memory effect of the substrate. The interfacial layer formed after annealing at 873 K between the Si thin film and the substrate was essential for the shape memory effect-induced crack closure. Cracks which formed during lithiation in the Si thin film annealed at 873 K after deposition were closed by delithiation followed by heating up to 373 K. (C) 2010 Elsevier B.V. All rights reserved.
키워드
Shape memory alloys (SMA); Sputtering; Scanning electron microscopy (SEM); Interface structure; Crack closure; LI-ION BATTERIES; NI; SILICON; ANODE; SYSTEM; ELECTRODE; BEHAVIOR
- 제목
- Shape memory effect-induced crack closure in Si thin film deposited on a Ti-50.3Ni (at%) alloy substrate
- 저자
- Cho, Gyu-bong; Kim, Bo-min; Choi, Hee-jin; Noh, Jung-pil; Choi, Si-young; Ahn, Hyo-jun; Miyazaki, Shuichi; Nam, Tae-hyun
- 발행일
- 2010-09-24
- 유형
- Article
- 권
- 507
- 호
- 1
- 페이지
- L8 ~ L12
- 언어
- ENG
- 출판사
- ELSEVIER SCIENCE SA
- 발행국가
- 스위스
- ISSN
- E 1873-4669
P 0925-8388