Preparation and electrical properties of sol infiltrated Pb(Zr0.7Ti0.3)O-3 ferroelectric thick films

  • Lee, Sung-Gap
Citations

WEB OF SCIENCE

8
Citations

SCOPUS

8

초록

Ferroelectric PZT(70/30) thick films were fabricated by the hybrid technique adding the sol coating process to the normal screen-printing process to obtain a good densification. Structural and electrical properties of the thick films with the sol concentration were investigated. The thickness of all thick films spin-coated four times was approximately 80-85 mu m. The relative dielectric constant increased and dielectric loss decreased with increasing the sol concentration, the values of the thick film coated with sol concentration of 1.5 M were 698 and 2.5% at 1 kHz, respectively. And the remanent polarization and dielectric breakdown strength of the thick film coated with sol concentration of 1.5 M were about 38 mu C/cm(2) and 200 kV/cm, respectively. The leakage current densities were less than 10(-8) A/cm(2) at the applied electric field range of 0-100 kV/cm in all thick films. (C) 2007 Elsevier B.V. All rights reserved.

키워드

sol-gel processes; thick films; ferroelectrics; perovskite
제목
Preparation and electrical properties of sol infiltrated Pb(Zr0.7Ti0.3)O-3 ferroelectric thick films
저자
Lee, Sung-Gap
DOI
10.1016/j.jallcom.2006.12.115
발행일
2008-04-24
유형
Article
저널명
Journal of Alloys and Compounds
권
454
호
1-2
페이지
406 ~ 409