Effect of Back-Gate Bias-Induced Interfaces on the Zero-Temperature-Coefficient in Fully Depleted SOI Transistors

초록

This study investigates the impact of back-gate bias-induced interfaces on the zero-temperature-coefficient (ZTC) point in fully depleted SOI transistors, revealing its fundamental mechanism through mutual compensation between threshold voltage (V-th) shifts and interface-affected carrier mobility. Experimental results demonstrate that the ZTC point systematically tracks V-th modulation and interface effects with varying Vgb. Notably, positive V-gb significantly narrows the gap between ZTC and V-th, as the dominant conduction channel shifts toward the high-quality bottom interface with minimal interface states influence.

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