H-Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors

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초록

Four new quaterthiophene derivatives with end-groups composed of dicyclohexyl ethyl (DCE4T), dicyclohexyl butyl (DCB4T), cyclohexyl ethyl (CE4T), and cyclohexyl butyl (CB4T) were designed. All materials showed high solubility in common organic solvents. UV-vis absorption measurements showed that the quaterthiophene derivatives with asymmetrically substituted cyclohexyl end-groups (CE4T and CB4T) preferred H-type aggregation whereas those with symmetrically substituted cyclohexyl end-groups (DCE4T and DCB4T) preferred J-type aggregation. The molecular structure-dependent packing (H or J) of the new quaterthiophene derivatives was analyzed by grazing-incidence wide-angle X-ray scattering (GIWAXS) measurements. The field-effect mobilities of devices that incorporated the asymmetrical molecules, CE4T and CB4T, were quite high, above 10(-2) cm (2) V-1 s(-1), due to H-aggregation, whereas the fi eld-effect mobilities of devices that incorporated symmetrical molecules, DCE4T and DCB4T, were poor, below 10(-4) cm (2) V-1 s(-1), due to J-aggregation. More importantly, H-aggregation within the thin fi lm provided stable crystalline morphologies in the spin-coated fi lms, and, thus, thin fi lm transistors (TFTs) using cyclohexylated quaterthiophenes yielded highly reproducible transistor performances. The distributions of measured fi eld-effect mobilities in transistors based on cyclohexylated quaterthiophenes with H-aggregation were remarkably narrow.

키워드

FIELD-EFFECT TRANSISTORSHIGH-PERFORMANCE SEMICONDUCTORSSELF-ASSEMBLED MONOLAYEREND-CAPPED OLIGOMERSX-RAY-SCATTERINGCRYSTAL-STRUCTURESIDE-CHAINOLIGOTHIOPHENESPOLYMERQUATERTHIOPHENES
제목
H-Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors
저자
Kim, Seul-ongAn, Tae KyuChen, JunKang, IlKang, So HeeChung, Dae SungPark, Chan EonKim, Yun-HiKwon, Soon-Ki
DOI
10.1002/adfm.201002367
발행일
2011-05
유형
Article
저널명
Advanced Materials for Optics and Electronics
21
9
페이지
1616 ~ 1623