A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

doi:10.1016/j.sse.2017.10.009

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A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

Kim, Dong Young;
Seok, Ogyun;
Park, Himchan;
Bahng, Wook;
Kim, Hyoung Woo;
외 1명

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6

초록

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low workfunction material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

키워드

SiC; Trench; Schottky; SBD; TSBS; Poly-Si; DIODES

제목: A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

저자: Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

DOI: 10.1016/j.sse.2017.10.009

발행일: 2018-02

유형: Article; Proceedings Paper

저널명: Solid-State Electronics

권: 140

페이지: 8 ~ 11