재구성 키 생성을 위한 모드 선택형 멤리스터 PUF의구현 및 특성 평가

초록

In this study, a mode-selectable memristor PUF for reconfigurable key generation was implemented usingPt/HfO2/SiO2/TaN devices. Bipolar resistive switching with step-like SET/RESET transitions was observed across100 cells, indicating filamentary switching behavior. Under a fixed read condition, the read-current distributions ofLRS (mA) and HRS (μA) were well separated, and LRS exhibited a larger dispersion, which is beneficial forrandomness. Reconfigurable instances (PUF1–PUF10) were generated by SET/RESET cycling, and inter-instanceindependence was evaluated using Inter-HD over 45 pairwise comparisons, yielding 49.7% (LRS) and 50.1% (HRS). Row-wise entropy analysis further confirmed limited spatial bias. These results support mode-selectable PUFoperation by choosing LRS or HRS according to system requirements.

키워드