Interfacial self-assembly of novel tribopositive nanoporous 2D germanium selenide thin film for energy harvesting with high temperature stability

초록

With the rapid advancement of triboelectric nanogenerator (TENG) technology, identifying novel, thermally stable tribopositive materials compatible with scalable fabrication processes remains a critical requirement for sustainable mechanical energy harvesting. In this work, we present the very first TENG device based on Radio-Frequency (RF) sputtered, two-dimensional (2D) p-type Germanium Selenide (GeSe) nanoporous thin films. GeSe is particularly promising due to its layered crystal structure, tunable bandgap, high intrinsic carrier mobility, anisotropic charge transport, and excellent thermal and chemical stability, all of which are conducive to efficient charge generation and transport. The performance of the GeSe-based TENG was systematically optimized by varying the post-deposition annealing temperature (pristine, 275, 375, and 475°C), which directly modulates the film porosity, surface roughness, and surface potential. The GeSe thin film annealed at 375 °C exhibits a highly porous architecture that markedly increases the effective contact area and surface charge density, thereby resulting in enhanced charge generation and transport. Consequently, the optimized 2D GeSe-375 TENG achieves an output voltage of ∼200 V, current ∼18 µA, and a power density of ∼274.05 µW cm−2, surpassing the performance of many previously reported 2D-material-based TENGs. Comprehensive structural, morphological, and electrical analyses establish a direct correlation between pore evolution, surface potential, and triboelectric output, with stable operation demonstrated over 35,000 cycles. The integration of porosity engineering with scalable RF sputtering positions 2D GeSe as a sustainable, high-performance materials platform for next-generation mechanical energy harvesting technologies. © 2026 Published by Elsevier B.V.

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