Double-confined phase-change heterostructure memory for ultra-stable low-power multi-level operation

초록

Phase change heterostructures (PCHs) have emerged as effective solutions to mitigate atomic diffusion in phase change random access memory (PCRAM). Atomic diffusion often leads to structural instability, while rapid phase transitions hinder reliable multi-level operation during the RESET process. These limitations pose significant challenges for scalability and performance in advanced memory technologies. To address these issues, this study presents a double-confined PCH device that incorporates Sb2Te3 as the phase change material and NiTe2 and MoTe2 as confinement layers. This innovative architecture precisely controls amorphous region formation through confined heat diffusion, enabling accurate resistance tuning, rapid multi-level switching, and ultra-low power consumption. The NiTe2 and MoTe2 layers effectively regulate heat conduction and confinement, minimizing thermal cross-talk and enhancing structural stability during operation. Compared with conventional PCH devices, the proposed design achieves a 110% increase in durability, a 76% reduction in power consumption, and robust multi-level operational capability. These advancements represent a significant step forward in enhancing the overall performance and reliability of PCRAM technologies. Furthermore, the proposed device holds promise for high-density memory integration in next-generation computing systems, addressing the growing demand for scalable and energy-efficient memory solutions.Double-confined phase-change heterostructure (DC-PCH) uses two confinement materialsNiTe2 confinement layers are used as conduction regions for fast switchingMoTe2 confinement layers are used as thermal barrier for multi-level operationDC-PCH offers ultra-low power consumption, low drift resistance, and fast switchingDC-PCH contributes to high integration due to its stable multi-level operation

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