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Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT
- Park, Sung Jin;
- Kim, Sul Ong;
- Jung, Sung Ouk;
- Yi, Mi-Hye;
- Kim, Yun-Hi;
- ... Kwon, Soon-Ki
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11초록
An organic field-effect transistor was fabricated based on a thin film of 1,4-bis-(2-naphthalen-2-ylvinyl)benzene (BNDV). The organic semiconductor was deposited via thermal evaporation on a chemically modified silicon dioxide surface. The thermal, optical, electronic, and surface properties of the BNDV compound were investigated by thermogravimetric analysis, differential scanning calorimetry, ultraviolet-visible (UV-vis) absorption, photoluminescence spectroscopies, cyclic voltammetry, x-ray diffraction, and atomic force microscopy. The BNDV had good oxidation stability and exhibited a field-effect performance with a mobility of 0.062 cm(2)/V s, a subthreshold slope of 0.4 V, and an on/off ratio of 2.45 x 10(5).
키워드
Field-effect transistor; semiconductor; oxidation stability; mobility; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-MOBILITY; HIGH-PERFORMANCE; SEMICONDUCTORS; DERIVATIVES; DEVICES
- 제목
- Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT
- 저자
- Park, Sung Jin; Kim, Sul Ong; Jung, Sung Ouk; Yi, Mi-Hye; Kim, Yun-Hi; Kwon, Soon-Ki
- 발행일
- 2009-09
- 유형
- Article
- 권
- 38
- 호
- 9
- 페이지
- 2000 ~ 2005
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers
- 발행국가
- 미국
- 분량
- 6 페이지
- ISSN
- E 1543-186X
P 0361-5235