Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT

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초록

An organic field-effect transistor was fabricated based on a thin film of 1,4-bis-(2-naphthalen-2-ylvinyl)benzene (BNDV). The organic semiconductor was deposited via thermal evaporation on a chemically modified silicon dioxide surface. The thermal, optical, electronic, and surface properties of the BNDV compound were investigated by thermogravimetric analysis, differential scanning calorimetry, ultraviolet-visible (UV-vis) absorption, photoluminescence spectroscopies, cyclic voltammetry, x-ray diffraction, and atomic force microscopy. The BNDV had good oxidation stability and exhibited a field-effect performance with a mobility of 0.062 cm(2)/V s, a subthreshold slope of 0.4 V, and an on/off ratio of 2.45 x 10(5).

키워드

Field-effect transistor; semiconductor; oxidation stability; mobility; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-MOBILITY; HIGH-PERFORMANCE; SEMICONDUCTORS; DERIVATIVES; DEVICES
제목
Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT
저자
Park, Sung Jin; Kim, Sul Ong; Jung, Sung Ouk; Yi, Mi-Hye; Kim, Yun-Hi; Kwon, Soon-Ki
DOI
10.1007/s11664-009-0830-3
발행일
2009-09
유형
Article
저널명
Journal of Electronic Materials
권
38
호
9
페이지
2000 ~ 2005