Complementary and Self-Compliant Resistive Switching in Laterally Structured PEDOT:PSS Memory Devices

초록

This study investigates complementary resistive switching (CRS) in PEDOT:PSS-based memory devices fabricated in a lateral structure with interdigitated gold electrodes. Three PEDOT:PSS formulations-Clevios P VP AI 4083, P VP CH 8000, and PH 1000-were examined under varying electrode spacings, all exhibiting CRS without requiring electroforming. CH 8000 showed the highest pristine resistance, while PH 1000 had the lowest. Increasing electrode spacing resulted in higher resistance states, reducing conduction currents. At low voltages, the devices exhibited ohmic conduction, transitioning to CRS at higher voltages. AI 4083 and CH 8000 demonstrated symmetric CRS behavior, whereas PH 1000 displayed asymmetric switching, likely due to charge-trapping effects. Endurance testing revealed AI 4083 maintained stable performance over 55 cycles, outperforming CH 8000 and PH 1000. Except for PH 1000 at a 3 & micro;m electrode spacing, all devices exhibited gradual, non-abrupt switching without reaching the compliance current of 0.1 A. The lateral electrode structure also keeps the resistive switching layer exposed, enabling direct interaction with gases or biological analytes beyond conventional nonvolatile memory applications.

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