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Feasibility of re-oxidized nitrided oxide (RONO) as a charge-trapping medium for the non-volatile memory
- Lee, S.-E.;
- Kim, J.-Y.;
- An, H.-M.;
- Seo, K.-Y.;
- Kim, B.
SCOPUS
2초록
We report on feasibility of a re-oxidized nitrided oxide (RONO) as a charge-trapping medium for non-volatile memory. The RONO is in situ formed by initial oxidation in wet oxygen ambient followed by NO anneal, then re-oxidation in wet O2 ambient, and has an oxide/nitrogen-rich layer/oxide structure. The nitrogen existing in the oxide bulk constitutes SiON bonding, and the nitrogen existing near the new formed Si-SiO2 interface constitutes Si2NO bonding. The SiON bonding due to the non-bonding site of nitrogen buried in the oxide is expected as a main bonding status important to the memory properties. MOS transistors with the RONO show the maximum memory window of 2.5 V and the memory retention of about three-years. ? 2007 Elsevier Ltd. All rights reserved.
키워드
- 제목
- Feasibility of re-oxidized nitrided oxide (RONO) as a charge-trapping medium for the non-volatile memory
- 저자
- Lee, S.-E.; Kim, J.-Y.; An, H.-M.; Seo, K.-Y.; Kim, B.
- 발행일
- 2007
- 유형
- Article
- 권
- 51
- 호
- 7
- 페이지
- 1009 ~ 1013