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Electrochemical properties of Si film electrodes with TiNi shape memory alloy as a current collector
- Cho, Gyu-bong;
- Kim, Bo-min;
- Noh, Jung-pil;
- Im, Yeon-min;
- Lee, Sang-hun;
- ... Nam, Tae-hyun;
- 외 1명
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8초록
The electrochemical and structural properties of Si thin film electrodes using a TiNi shape memory alloy as a current collector (substrate) are investigated with and without annealing. Annealed Si film electrodes exhibit an initial efficiency of 87% and a charge capacity retention (at the 50th cycle) of 85%. XRD results of the annealed Si film electrode during the charge-discharge process reveal the phase transformation (stress accommodation) of the TiNi substrate: cubic TiNi (initial) to monoclinic TiNi (after charge) and back to cubic TiNi (after discharge). SEM results of the annealed Si electrode show a remarkable reduction in structural damage of the Si film as compared to the as-deposited Si film electrode. The good electrochemical performances are ascribed to the high structural stability enhanced by both the post-annealing and stress accommodation of the TiNi substrate. (C) 2012 Elsevier B.V. All rights reserved.
키워드
- 제목
- Electrochemical properties of Si film electrodes with TiNi shape memory alloy as a current collector
- 저자
- Cho, Gyu-bong; Kim, Bo-min; Noh, Jung-pil; Im, Yeon-min; Lee, Sang-hun; Kim, Ki-won; Nam, Tae-hyun
- 발행일
- 2013-11-15
- 유형
- Article; Proceedings Paper
- 권
- 577
- 페이지
- S190 ~ S194