Electrical properties of Sb-doped apatite-type lanthanum silicate materials for SOFCs

  • Kim, Dae-Young; 
  • Lee, Sung-Gap; 
  • Jo, Seo-Hyeon
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SCOPUS

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초록

La9.33-xSbx (SiO4)(6)O-2 (0 <= x <= 2.0) ceramics were fabricated using the standard solid-state synthesis method for solid oxide electrolytes. Increasing the Sb content in apatite-type La9.33-xSbx(SiO4)(6)O-2 leads to an increased unit cell volume. The room-temperature structure is hexagonal, space group P6(3) or P6(3)/m,with a = 9.728 angstrom, and c = 7.191 angstrom for La8.33Sb(SiO4)(6)O-2. The average grain size in sintered specimens was approximately 1.5 to 1.9 mu m. La9.33-xSbx(SiO4)(6)O-2 (1.5 = x = 2.0) apatite ceramics showed the formation of a second phase of La2Si2O7, due to the volatilization of the Sb atoms. The electrical conductivity at 800 degrees C and activation energy of La8.33Sb(SiO4)(6)O-2 doped with 1.0 mol% Sb showed a maximum value of 3.3 x 10(-3) S cm(-1) and 1.47 eV, respectively.

키워드

Solid oxide electrolyte; Apatite-type; Electrical conductivity; DEFECT CHEMISTRY; OXIDE; CONDUCTIVITY; LA9.33SI6O26
제목
Electrical properties of Sb-doped apatite-type lanthanum silicate materials for SOFCs
저자
Kim, Dae-Young; Lee, Sung-Gap; Jo, Seo-Hyeon
발행일
2013-08
유형
Article
저널명
Journal of Ceramic Processing Research
권
14
호
4
페이지
498 ~ 501