In-situ 분석을 통한 모드 전이형 멤리스터의 전기 전도 메커니즘 규명

초록

In this study, we propose a dual-mode memristor capable of selectively exhibiting both ferroelectric and resistive switching behaviors within the same MIM structure. The irreversible mode transition enables the device to operate first as a ferroelectric memristor and then as a stable resistive memristor. In-situ I-V fitting confirms that DT-FN tunneling and Poole-Frenkel emission dominate the ferroelectric mode, while SCLC governs the resistive mode. This selective controllability of conduction and memory properties within a single device demonstrates its potential for next-generation memory applicable to PIM-based AI computing architectures requiring both shortand long-term memory functions.

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