Cited 143 time in
Fully rubbery integrated electronics from high effective mobility intrinsically stretchable semiconductors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sim, Kyoseung | - |
| dc.contributor.author | Rao, Zhoulyu | - |
| dc.contributor.author | Kim, Hae-Jin | - |
| dc.contributor.author | Thukral, Anish | - |
| dc.contributor.author | Shim, Hyunseok | - |
| dc.contributor.author | Yu, Cunjiang | - |
| dc.date.accessioned | 2022-12-26T15:15:52Z | - |
| dc.date.available | 2022-12-26T15:15:52Z | - |
| dc.date.issued | 2019-02 | - |
| dc.identifier.issn | 2375-2548 | - |
| dc.identifier.issn | 2375-2548 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/9464 | - |
| dc.description.abstract | An intrinsically stretchable rubbery semiconductor with high mobility is critical to the realization of high-performance stretchable electronics and integrated devices for many applications where large mechanical deformation or stretching is involved. Here, we report fully rubbery integrated electronics from a rubbery semiconductor with a high effective mobility, obtained by introducing metallic carbon nanotubes into a rubbery semiconductor composite. This enhancement in effective carrier mobility is enabled by providing fast paths and, therefore, a shortened carrier transport distance. Transistors and their arrays fully based on intrinsically stretchable electronic materials were developed, and they retained electrical performances without substantial loss when subjected to 50% stretching. Fully rubbery integrated electronics and logic gates were developed, and they also functioned reliably upon mechanical stretching. A rubbery active matrix based elastic tactile sensing skin to map physical touch was demonstrated to illustrate one of the applications. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AMER ASSOC ADVANCEMENT SCIENCE | - |
| dc.title | Fully rubbery integrated electronics from high effective mobility intrinsically stretchable semiconductors | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1126/sciadv.aav5749 | - |
| dc.identifier.scopusid | 2-s2.0-85060978094 | - |
| dc.identifier.wosid | 000460145700078 | - |
| dc.identifier.bibliographicCitation | SCIENCE ADVANCES, v.5, no.2 | - |
| dc.citation.title | SCIENCE ADVANCES | - |
| dc.citation.volume | 5 | - |
| dc.citation.number | 2 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
| dc.subject.keywordPlus | CARBON NANOTUBE | - |
| dc.subject.keywordPlus | PERFORMANCE | - |
| dc.subject.keywordPlus | CONTACT | - |
| dc.subject.keywordPlus | NANOCOMPOSITES | - |
| dc.subject.keywordPlus | INTERFACES | - |
| dc.subject.keywordPlus | SILICON | - |
| dc.subject.keywordPlus | DESIGN | - |
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