Effect of the Nitrogen Environment On Indium Gallium Zinc Oxide Thin Film Transistors with Low Temperature Ultraviolet Annealing

Abstract

This study explores the influence of nitrogen gas flow rate on the electrical characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) annealed under heat-assisted UV illumination.The aim is to understand how nitrogen flow rates impact the performance of solution-processed IGZO TFTs annealed at low temperatures, which is crucial for developing highperformance devices for next-generation electronics and temperature-sensitive applications. The IGZO TFTs were fabricated on glass substrates using a bottom-gate top-contact configuration, with the IGZO thin film deposited by inkjet printing and annealed in a chamber with varying nitrogen gas flow rates (0.5, 1, 2, and 5 L/min) at 250 degrees C for 2 hours under UV illumination. The electrical characteristics were extracted from transfer characteristics measurements. The results show that a nitrogen flow rate of 1 L/min enhances the electrical properties of IGZOTFTs, likely due to a suitable concentration of oxygen vacancies. Excessive N2 flow rates (>1 L/min) negatively impact on theTFT characteristics, while lower flow rates (<1 L/min) result in more negative threshold voltages and lower on/off current ratios. The study concludes that optimizing the nitrogen gas flow rate is critical for achieving desired TFT properties, offering a valuable tool for fine-tuning IGZOTFTs to meet specific application requirements.