Resistive Switching Behavior of Sol-Gel-Processed ZnMgO/ZnO Bilayer in Optoelectronic Devices

Abstract

Sol-gel-processed zinc oxide (ZnO) and magnesium-doped zinc oxide (ZnMgO) are widely used in quantum dot light-emitting diodes (QLEDs) due to their excellent charge transport properties, ease of fabrication, and tunable film characteristics. In particular, the ZnMgO/ZnO bilayer structure has attracted considerable attention for its dual functionality: defect passivation by ZnMgO and efficient charge transport by ZnO. However, while the effects of resistive switching (RS) in individual ZnO and ZnMgO layers on the aging behavior of QLEDs have been studied, the RS characteristics of sol-gel-processed ZnMgO/ZnO bilayers remain largely unexplored. In this study, we systematically analyzed RS properties of an indium tin oxide (ITO)/ZnMgO/ZnO/aluminum (Al) device, demonstrating superior performance compared to devices with single layers of either ZnMgO or ZnO. We also investigated the shelf-aging characteristics of RS devices with single and bilayer structures, finding that the bilayer structure exhibited the least variation over time, thereby confirming its enhanced uniformity and reliability. Furthermore, based on basic current-voltage measurements, we estimated accuracy variations in MNIST pattern recognition using a two-layer perceptron model. These results not only identify a promising RS device architecture based on the sol-gel process but also offer valuable insights into the aging behavior of QLEDs incorporating ZnMgO/ZnO bilayers, ITO, and Al electrodes.