Recent advances in MXene materials for resistive switching memory devices

Abstract

Enhancing electronic performance and production is essential in this information age. The challenges posed by these requirements for silicon-based devices have led to an exploration of metal oxide semiconductors, organic semiconductors, and 2D materials in device technology. While advancements in electronics have been significant, certain limitations remain. 2D materials exhibit robust in-plane chemical bonding while displaying weak van der Waals interactions. Resistive switching (RS) memory devices leverage the atomic thickness of 2D materials to achieve high-density integration and rapid processing capabilities. A 2D metal material known as MXene has the potential to enable high-performance memory devices. Due to their distinctive electrical properties, 2D MXene materials hold significant promise for applications. In this review, recent advancements in RS memory systems emphasize the distinctive properties of 2D MXene. Memory systems based on RS demonstrate these characteristics. Investigating resistive-switching memory necessitates the use of 2D MXene. Also, MXene-based RS memory devices are utilized in data storage, artificial synapses, neuromorphic computing, and logic circuits. They have the potential to transform in-memory computing. This facilitates the development of artificial neural networks that reproduce the functions of the human brain, aiming for human-like intelligence. MXene-based RS memory devices have shown advancements, but numerous challenges persist. This topical overview advances neuromorphic computing by outlining key principles, addressing challenges, and proposing directions for future research.