A Comprehensive Review of Electrochemical Metallization and Valence Change Mechanisms in Filamentary Resistive Switching of Halide Perovskite-Based Memory Devices

Abstract

Halide perovskites (HPs) are gaining significant attention in data storage, particularly for their application in resistive random-access memory (ReRAM) systems. Their exceptional electrical and light absorption properties position them as potentially revolutionary materials for the memory industry. The use of HPs as resistive switching (RS) materials in ReRAMs is driven by their observed current-voltage hysteresis. This hysteresis is linked to the formation of defects within the HP crystals and the subsequent migration of ions through these defects. Understanding the underlying RS mechanisms in HP memories is critical for optimizing device design, especially considering how electrode choice influences RS performance. Among various design considerations for HP-based ReRAM devices, filamentary processes have emerged as a key area of research for RS memory. This review presents a comprehensive analysis of electrochemical metallization and valence-change modes in halide-perovskite ReRAM, incorporating in situ transmission electron microscopy (TEM) evidence alongside kinetic Monte Carlo simulations, which sets it apart from previous reviews. This review aims to clarify the operational mechanisms of HP-based ReRAMs, offering a detailed explanation of the RS mechanism. Furthermore, it provides a comprehensive analysis of recent advancements and trends in HP-based RS memory devices, presenting a thorough overview of current state-of-the-art findings. This review ultimately offers valuable insights into the dynamic and evolving field of HP-based ReRAM.