타원형 푸리에 계산자 방법을 통한 나노 패턴 균일도 분석

Abstract

Due to their structural properties, nanopatterns are actively used in various fields. In the semiconductor industry, the importance of analyzing the uniformity of nanopatterns is becoming increasingly important. New analysis methods are needed. The elliptical Fourier descriptor (EFD) method can quantify the shape information into frequency components by Fourier transforming contours. In this study, shape analysis of nanopatterns was performed using EFD. Nanopatterns with a period of about 400 nm were formed using laser interference lithography. EFD coefficients were then compared. Results of the analysis showed that the variation between coefficients of poorly shaped patterns was larger than that of normal patterns, confirming the possibility of quantitative comparison. However, further research is needed to establish a clear correlation between coefficient changes and quality changes. In the absence of a standard for geometrical changes in nanopatterns, it is expected that EFD can be applied as a methodology to provide new quantitative indicators.