Effects of Poor Solvent for Solution-Processing Passivation of Organic Field Effect Transistors

Abstract

For the solution-processing passivation of organic field effect transistors (OFETs), the effects of the solvent on the structure and morphology of solution-processed semiconductors containing bulky triisopropylsilylethynyl groups were investigated by using X-ray diffraction and atomic force microscopy. Direct exposure of the semiconductor layers to ethanol improved their molecular ordering and crystallinity, thus leading to enhanced electrical characteristics of the OFETs. This improvement in the characteristics of the devices can be attributed to the reduction in the trap densities of the OFETs after ethanol exposure. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3251337] All rights reserved.