다양한 TFB 용매를 활용한 전기-형태학 표면 변화에따른 양자점 발광 다이오드 특성 연구

Abstract

This study systematically analyzes the effects of different solvents on TFB used as the hole transport layer in quantum dot light-emitting diodes (QLEDs). QLEDs are emerging as next-generation display technology due to their advantages of color control, light stability, narrow half-width, high color purity, and solution processability. We investigate QLED performance using organic solvents including CB, p-xylene, DCB, CHB, and a mixture of CHB:CB, to form the TFB layer. Results show that CB-based devices exhibit the highest external quantum and current efficiencies, whereas p-xylene-based devices demonstrate the longest lifetime. Atomic force microscopy analysis show that the morphological roughness of the TFB film increases in the order of CB < p-xylene < DCB < CHB:CB < CHB, correlating with device performance degradation. Impedance analysis reveals solvent-dependent variations in the resistance of both TFB and PEDOT:PSS:IPA films. This comprehensive study confirms that selection of solvent for TFB significantly affects QLED performance, lifetime, and film properties. The results offer valuable insights for optimizing QLED fabrication processes, which could aid in the commercialization and large-scale production of QLED technology. In addition, the developed methodology may have broader applications for optimizing other organic electronic devices, thereby advancing the entire field of organic electronics. The study’s findings underscore the critical role of solvent selection in achieving high-performance QLEDs and provide valuable guidance for future research and development in this area.