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Development of high luminous efficacy red-emitting phosphor-in-glass for high-power LED lighting systems using our original low <i>Tg</i> and <i>Ts</i> glass
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Young Ji | - |
| dc.contributor.author | Jeong, Gyu Jin | - |
| dc.contributor.author | Kim, Jin Ho | - |
| dc.contributor.author | Lee, Youngjin | - |
| dc.contributor.author | Kim, Sun Woog | - |
| dc.contributor.author | Kim, Cheol Jin | - |
| dc.contributor.author | Hwang, Jonghee | - |
| dc.date.accessioned | 2024-12-03T00:00:53Z | - |
| dc.date.available | 2024-12-03T00:00:53Z | - |
| dc.date.issued | 2019-12 | - |
| dc.identifier.issn | 0146-9592 | - |
| dc.identifier.issn | 1539-4794 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/73362 | - |
| dc.description.abstract | Red-emitting phosphor-in-glass (PiG) materials with a high luminescence efficiency were developed by co-firing commercial red-emitting (Sr, Ca)AlSiN3:Eu2+ (SCASN) phosphor and our original glass fits with a composition of Li2O-Na2O-ZnO-Al2O3-B2O3-P2O5, which has a low Tg (271 degrees C) and Ts (380 degrees C) temperatures. By optimizing the sintering temperature and the content of the phosphor, the highest luminous efficacy was obtained for the 3 wt.% SCASN-based PiG sintered at 400 degrees C, which showed a luminous efficacy of 25 lm/Wrad by combining the PiG materials with a blue light-emitting diode (LED) chip-on-board (COB, incident power = 100 mA). The internal quantum efficiency of this sample under excitation at 450 nm was 53%. The PiG-based LED maintained a high luminous efficacy when the incident power of the blue COB increased up to 5.5 W (47 lm). (C) 2019 Optical Society of America | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | OPTICAL SOC AMER | - |
| dc.title | Development of high luminous efficacy red-emitting phosphor-in-glass for high-power LED lighting systems using our original low <i>Tg</i> and <i>Ts</i> glass | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1364/OL.44.006057 | - |
| dc.identifier.scopusid | 2-s2.0-85076402279 | - |
| dc.identifier.wosid | 000510847400043 | - |
| dc.identifier.bibliographicCitation | OPTICS LETTERS, v.44, no.24, pp 6057 - 6060 | - |
| dc.citation.title | OPTICS LETTERS | - |
| dc.citation.volume | 44 | - |
| dc.citation.number | 24 | - |
| dc.citation.startPage | 6057 | - |
| dc.citation.endPage | 6060 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Optics | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.subject.keywordPlus | LUMINESCENCE PROPERTIES | - |
| dc.subject.keywordPlus | CRYSTAL-STRUCTURE | - |
| dc.subject.keywordPlus | THERMAL-TREATMENT | - |
| dc.subject.keywordPlus | WHITE | - |
| dc.subject.keywordPlus | DEGRADATION | - |
| dc.subject.keywordPlus | MECHANISM | - |
| dc.subject.keywordPlus | DIODES | - |
| dc.subject.keywordPlus | CE3+ | - |
| dc.subject.keywordPlus | EU2+ | - |
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