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Improvement of Visible Photodetection of Chemical Vapor Deposition-Grown MoS<sub>2</sub> Devices via Graphene/Au Contacts
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hwa, Yeongsik | - |
| dc.contributor.author | Chee, Sang-Soo | - |
| dc.date.accessioned | 2024-12-02T21:30:49Z | - |
| dc.date.available | 2024-12-02T21:30:49Z | - |
| dc.date.issued | 2022-12 | - |
| dc.identifier.issn | 1424-8220 | - |
| dc.identifier.issn | 1424-3210 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/71840 | - |
| dc.description.abstract | Two-dimensional (2D) molybdenum disulfide (MoS2) is a promising material for constructing high-performance visible photosensor arrays because of its high mobility and scale-up process. These distinct properties enable the construction of practical optoelectrical sensor arrays. However, contact engineering for MoS2 films is not still optimized. In this work, we inserted a graphene interlayer between the MoS2 films and Au contacts (graphene/Au) via the wet-transfer method to boost the device performance. Using graphene/Au contacts, outstanding electrical properties, namely field-effect mobility of 12.06 cm(2)/V center dot s, on/off current ratio of 1.0 x 10(7), and responsivity of 610 A/W under illumination at 640 nm, were achieved. These favorable results were from the Fermi-level depinning effect induced by the graphene interlayer. Our results may help to construct large-area photonic sensor arrays based on 2D materials. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Multidisciplinary Digital Publishing Institute (MDPI) | - |
| dc.title | Improvement of Visible Photodetection of Chemical Vapor Deposition-Grown MoS<sub>2</sub> Devices via Graphene/Au Contacts | - |
| dc.type | Article | - |
| dc.publisher.location | 스위스 | - |
| dc.identifier.doi | 10.3390/s22249687 | - |
| dc.identifier.scopusid | 2-s2.0-85144572273 | - |
| dc.identifier.wosid | 000904233700001 | - |
| dc.identifier.bibliographicCitation | Sensors, v.22, no.24 | - |
| dc.citation.title | Sensors | - |
| dc.citation.volume | 22 | - |
| dc.citation.number | 24 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Instruments & Instrumentation | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | METAL CONTACTS | - |
| dc.subject.keywordPlus | MONOLAYER MOS2 | - |
| dc.subject.keywordPlus | TRANSITION | - |
| dc.subject.keywordPlus | REDUCTION | - |
| dc.subject.keywordAuthor | MoS2 | - |
| dc.subject.keywordAuthor | graphene | - |
| dc.subject.keywordAuthor | interlayer | - |
| dc.subject.keywordAuthor | contact engineering | - |
| dc.subject.keywordAuthor | large area | - |
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