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Cited 3 time in webofscience Cited 3 time in scopus
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Surface engineering of high-<i>k</i> polymeric dielectric layers with a fluorinated organic crosslinker for use in flexible-platform electronics

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dc.contributor.authorYe, Heqing-
dc.contributor.authorKwon, Hyeok-jin-
dc.contributor.authorRyu, Ka Yeon-
dc.contributor.authorWu, Kaibin-
dc.contributor.authorPark, Jeongwan-
dc.contributor.authorBabita, Giri-
dc.contributor.authorKim, Inae-
dc.contributor.authorYang, Chanwoo-
dc.contributor.authorKong, Hoyoul-
dc.contributor.authorKim, Se Hyun-
dc.date.accessioned2024-07-10T07:30:12Z-
dc.date.available2024-07-10T07:30:12Z-
dc.date.issued2024-08-
dc.identifier.issn2516-0230-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/71040-
dc.description.abstractHigh-k polymeric layers were prepared by combining various functional groups and were applied as gate dielectrics for practical organic field-effect transistors (OFETs). Crosslinking of the polymeric layers through UV-assisted organic azide fluorine-based crosslinkers induced dramatic improvements in the electrical performance of the OFET, such as field-effect mobility and bias-stress stability. Our synthesis and manufacturing method can be a useful technique for ensuring device operation stability and electrical property enhancement. With this analysis, we further applied our polymer-dielectric OFETs to flexible-platform-based electronic components, including unit OFETs and simple logic devices (NOT, NAND, and NOR gates). The outcomes of this research and development suggest a suitable method for the low-cost mass production of large-area flexible and printable devices, using a printing-based approach to replace current processes.-
dc.format.extent9-
dc.language영어-
dc.language.isoENG-
dc.publisherThe Royal Society of Chemistry-
dc.titleSurface engineering of high-&lt;i&gt;k&lt;/i&gt; polymeric dielectric layers with a fluorinated organic crosslinker for use in flexible-platform electronics-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1039/d3na01018j-
dc.identifier.scopusid2-s2.0-85197888432-
dc.identifier.wosid001256581400001-
dc.identifier.bibliographicCitationNanoscale Advances, v.6, no.16, pp 4119 - 4127-
dc.citation.titleNanoscale Advances-
dc.citation.volume6-
dc.citation.number16-
dc.citation.startPage4119-
dc.citation.endPage4127-
dc.type.docTypeArticle-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience &amp; Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience &amp; Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusGATE DIELECTRICS-
dc.subject.keywordPlusSTABILITY-
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