Detailed Information

Cited 3 time in webofscience Cited 3 time in scopus
Metadata Downloads

Surface engineering of high-<i>k</i> polymeric dielectric layers with a fluorinated organic crosslinker for use in flexible-platform electronics

Full metadata record
DC Field Value Language
dc.contributor.authorYe, Heqing-
dc.contributor.authorKwon, Hyeok-jin-
dc.contributor.authorRyu, Ka Yeon-
dc.contributor.authorWu, Kaibin-
dc.contributor.authorPark, Jeongwan-
dc.contributor.authorBabita, Giri-
dc.contributor.authorKim, Inae-
dc.contributor.authorYang, Chanwoo-
dc.contributor.authorKong, Hoyoul-
dc.contributor.authorKim, Se Hyun-
dc.date.accessioned2024-07-10T07:30:12Z-
dc.date.available2024-07-10T07:30:12Z-
dc.date.issued2024-08-
dc.identifier.issn2516-0230-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/71040-
dc.description.abstractHigh-k polymeric layers were prepared by combining various functional groups and were applied as gate dielectrics for practical organic field-effect transistors (OFETs). Crosslinking of the polymeric layers through UV-assisted organic azide fluorine-based crosslinkers induced dramatic improvements in the electrical performance of the OFET, such as field-effect mobility and bias-stress stability. Our synthesis and manufacturing method can be a useful technique for ensuring device operation stability and electrical property enhancement. With this analysis, we further applied our polymer-dielectric OFETs to flexible-platform-based electronic components, including unit OFETs and simple logic devices (NOT, NAND, and NOR gates). The outcomes of this research and development suggest a suitable method for the low-cost mass production of large-area flexible and printable devices, using a printing-based approach to replace current processes.-
dc.format.extent9-
dc.language영어-
dc.language.isoENG-
dc.publisherThe Royal Society of Chemistry-
dc.titleSurface engineering of high-&lt;i&gt;k&lt;/i&gt; polymeric dielectric layers with a fluorinated organic crosslinker for use in flexible-platform electronics-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1039/d3na01018j-
dc.identifier.scopusid2-s2.0-85197888432-
dc.identifier.wosid001256581400001-
dc.identifier.bibliographicCitationNanoscale Advances, v.6, no.16, pp 4119 - 4127-
dc.citation.titleNanoscale Advances-
dc.citation.volume6-
dc.citation.number16-
dc.citation.startPage4119-
dc.citation.endPage4127-
dc.type.docTypeArticle-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience &amp; Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience &amp; Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusGATE DIELECTRICS-
dc.subject.keywordPlusSTABILITY-
Files in This Item
There are no files associated with this item.
Appears in
Collections
자연과학대학 > 화학과 > Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kong, Ho Youl photo

Kong, Ho Youl
자연과학대학 (화학과)
Read more

Altmetrics

Total Views & Downloads

BROWSE