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전기 열량 소자로의 응용을 위한 K(Ta0.70Nb0.30)O3/K(Ta0.55Nb0.45)O3 이종층 박막의 구조적, 전기적 특성

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dc.contributor.author박병준-
dc.contributor.author육지수-
dc.contributor.author이삼행-
dc.contributor.author이명규-
dc.contributor.author박주석-
dc.contributor.author이성갑-
dc.date.accessioned2024-05-08T01:30:30Z-
dc.date.available2024-05-08T01:30:30Z-
dc.date.issued2024-05-
dc.identifier.issn1226-7945-
dc.identifier.issn2288-3258-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/70467-
dc.description.abstractIn this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta0.70Nb0.30)O3 and K(Ta0.55Nb0.45)O3 synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm2 and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10-6 K·m/V around 40℃, respectively.-
dc.format.extent7-
dc.language한국어-
dc.language.isoKOR-
dc.publisher한국전기전자재료학회-
dc.title전기 열량 소자로의 응용을 위한 K(Ta0.70Nb0.30)O3/K(Ta0.55Nb0.45)O3 이종층 박막의 구조적, 전기적 특성-
dc.title.alternativeStructural and Electrical Properties of K(Ta0.70Nb0.30)O3/K(Ta0.55Nb0.45)O3 Heterolayer Thin Films for Electrocaloric Devices-
dc.typeArticle-
dc.publisher.location대한민국-
dc.identifier.doi10.4313/JKEM.2024.37.3.9-
dc.identifier.bibliographicCitation전기전자재료학회논문지, v.37, no.3, pp 297 - 303-
dc.citation.title전기전자재료학회논문지-
dc.citation.volume37-
dc.citation.number3-
dc.citation.startPage297-
dc.citation.endPage303-
dc.identifier.kciidART003075040-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasskci-
dc.subject.keywordAuthorK(Ta0.70Nb0.30)O3/K(Ta0.55Nb0.45)O3 heterolayer films-
dc.subject.keywordAuthorSol-gel method-
dc.subject.keywordAuthorStructural properties-
dc.subject.keywordAuthorElectrocaloric effect-
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