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ZnO 박막 전자수송층의 공기 노출에 의한 양자점 발광다이오드의 특성 변화Effect of Air Exposure on ZnO Thin Film for Electron Transport Layer of Quantum Dot Light-Emitting Diode
- Other Titles
- Effect of Air Exposure on ZnO Thin Film for Electron Transport Layer of Quantum Dot Light-Emitting Diode
- Issue Date
- Nov-2023
- Publisher
- 한국센서학회
- Keywords
- Air exposure; ZnO; Quantum dot light-emitting diode (QLED); Electron transport layer (ETL); Trap energy distribution
- Citation
- 센서학회지, v.32, no.6, pp 455 - 461
- Pages
- 7
- Indexed
- SCOPUS
KCI
- Journal Title
- 센서학회지
- Volume
- 32
- Number
- 6
- Start Page
- 455
- End Page
- 461
- ISSN
- 1225-5475
2093-7563
- Abstract
- We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electrontransport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the densityof states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energylevels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reducedleakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low drivingvoltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs couldbe achieved.
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Collections - 공학계열 > 반도체공학과 > Journal Articles
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