A 310-nA Quiescent Current 3-fs-FoM Fully Integrated Capacitorless Time-Domain LDO With Event-Driven Charge Pump and Feedforward Transient Enhancement
DC Field | Value | Language |
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dc.contributor.author | Zhao, Jianming | - |
dc.contributor.author | Gao, Yuan | - |
dc.contributor.author | Zhang, Tan-Tan | - |
dc.contributor.author | Son, Hyunwoo | - |
dc.contributor.author | Heng, Chun-Huat | - |
dc.date.accessioned | 2022-12-26T10:00:45Z | - |
dc.date.available | 2022-12-26T10:00:45Z | - |
dc.date.issued | 2021-10 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.issn | 1558-173X | - |
dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/3228 | - |
dc.description.abstract | In this article, a fully integrated capacitorless low-dropout regulator (LDO) is presented for Internet-of-Things (IoT) edge sensor application. To achieve sub-1-V operation and fast transient response with low quiescent current, the conventional operational transconductance amplifier (OTA)-based error amplifier (EA) is replaced with oscillator-based voltage-to-time converter and time-domain signal processing, including time-domain edge-based frequency comparator (FC) and event-driven voltage mode charge pump (CP). Compared with the conventional phase frequency detector (PFD), the proposed clock-edge-based FC achieved more than six times power reduction. Event-driven CP is adopted to drive analog power transistor and the transient response is enhanced by feedforward capacitor C-FD and coarse-fine CP control. To further reduce the power consumption, multi-voltage domain and clock frequency optimization are implemented. A prototype chip is fabricated in a standard 65-nm CMOS process. The design only consumes 310-nA quiescent current while achieving 0.5-1.2-V input range, 1.0 x 10(6) load dynamic range, and 3-fs figure of merit (FoM). | - |
dc.format.extent | 10 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | A 310-nA Quiescent Current 3-fs-FoM Fully Integrated Capacitorless Time-Domain LDO With Event-Driven Charge Pump and Feedforward Transient Enhancement | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/JSSC.2021.3077453 | - |
dc.identifier.wosid | 000698895200009 | - |
dc.identifier.bibliographicCitation | IEEE Journal of Solid-State Circuits, v.56, no.10, pp 2924 - 2933 | - |
dc.citation.title | IEEE Journal of Solid-State Circuits | - |
dc.citation.volume | 56 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 2924 | - |
dc.citation.endPage | 2933 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | LOW-DROPOUT REGULATOR | - |
dc.subject.keywordPlus | DIGITAL LDO | - |
dc.subject.keywordPlus | LOW-POWER | - |
dc.subject.keywordAuthor | Charge pump (CP) | - |
dc.subject.keywordAuthor | frequency comparator (FC) | - |
dc.subject.keywordAuthor | low-dropout regulator (LDO) | - |
dc.subject.keywordAuthor | time-domain LDO | - |
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