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A 310-nA Quiescent Current 3-fs-FoM Fully Integrated Capacitorless Time-Domain LDO With Event-Driven Charge Pump and Feedforward Transient Enhancement

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dc.contributor.authorZhao, Jianming-
dc.contributor.authorGao, Yuan-
dc.contributor.authorZhang, Tan-Tan-
dc.contributor.authorSon, Hyunwoo-
dc.contributor.authorHeng, Chun-Huat-
dc.date.accessioned2022-12-26T10:00:45Z-
dc.date.available2022-12-26T10:00:45Z-
dc.date.issued2021-10-
dc.identifier.issn0018-9200-
dc.identifier.issn1558-173X-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/3228-
dc.description.abstractIn this article, a fully integrated capacitorless low-dropout regulator (LDO) is presented for Internet-of-Things (IoT) edge sensor application. To achieve sub-1-V operation and fast transient response with low quiescent current, the conventional operational transconductance amplifier (OTA)-based error amplifier (EA) is replaced with oscillator-based voltage-to-time converter and time-domain signal processing, including time-domain edge-based frequency comparator (FC) and event-driven voltage mode charge pump (CP). Compared with the conventional phase frequency detector (PFD), the proposed clock-edge-based FC achieved more than six times power reduction. Event-driven CP is adopted to drive analog power transistor and the transient response is enhanced by feedforward capacitor C-FD and coarse-fine CP control. To further reduce the power consumption, multi-voltage domain and clock frequency optimization are implemented. A prototype chip is fabricated in a standard 65-nm CMOS process. The design only consumes 310-nA quiescent current while achieving 0.5-1.2-V input range, 1.0 x 10(6) load dynamic range, and 3-fs figure of merit (FoM).-
dc.format.extent10-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleA 310-nA Quiescent Current 3-fs-FoM Fully Integrated Capacitorless Time-Domain LDO With Event-Driven Charge Pump and Feedforward Transient Enhancement-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/JSSC.2021.3077453-
dc.identifier.wosid000698895200009-
dc.identifier.bibliographicCitationIEEE Journal of Solid-State Circuits, v.56, no.10, pp 2924 - 2933-
dc.citation.titleIEEE Journal of Solid-State Circuits-
dc.citation.volume56-
dc.citation.number10-
dc.citation.startPage2924-
dc.citation.endPage2933-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusLOW-DROPOUT REGULATOR-
dc.subject.keywordPlusDIGITAL LDO-
dc.subject.keywordPlusLOW-POWER-
dc.subject.keywordAuthorCharge pump (CP)-
dc.subject.keywordAuthorfrequency comparator (FC)-
dc.subject.keywordAuthorlow-dropout regulator (LDO)-
dc.subject.keywordAuthortime-domain LDO-
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