Preparation and electrical properties of sol infiltrated Pb(Zr0.7Ti0.3)O-3 ferroelectric thick films
- Authors
- Lee, Sung-Gap
- Issue Date
- 24-Apr-2008
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- sol-gel processes; thick films; ferroelectrics; perovskite
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.454, no.1-2, pp 406 - 409
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 454
- Number
- 1-2
- Start Page
- 406
- End Page
- 409
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/27430
- DOI
- 10.1016/j.jallcom.2006.12.115
- ISSN
- 0925-8388
1873-4669
- Abstract
- Ferroelectric PZT(70/30) thick films were fabricated by the hybrid technique adding the sol coating process to the normal screen-printing process to obtain a good densification. Structural and electrical properties of the thick films with the sol concentration were investigated. The thickness of all thick films spin-coated four times was approximately 80-85 mu m. The relative dielectric constant increased and dielectric loss decreased with increasing the sol concentration, the values of the thick film coated with sol concentration of 1.5 M were 698 and 2.5% at 1 kHz, respectively. And the remanent polarization and dielectric breakdown strength of the thick film coated with sol concentration of 1.5 M were about 38 mu C/cm(2) and 200 kV/cm, respectively. The leakage current densities were less than 10(-8) A/cm(2) at the applied electric field range of 0-100 kV/cm in all thick films. (C) 2007 Elsevier B.V. All rights reserved.
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