Detailed Information

Cited 8 time in webofscience Cited 8 time in scopus
Metadata Downloads

Preparation and electrical properties of sol infiltrated Pb(Zr0.7Ti0.3)O-3 ferroelectric thick films

Authors
Lee, Sung-Gap
Issue Date
24-Apr-2008
Publisher
ELSEVIER SCIENCE SA
Keywords
sol-gel processes; thick films; ferroelectrics; perovskite
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.454, no.1-2, pp 406 - 409
Pages
4
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF ALLOYS AND COMPOUNDS
Volume
454
Number
1-2
Start Page
406
End Page
409
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/27430
DOI
10.1016/j.jallcom.2006.12.115
ISSN
0925-8388
1873-4669
Abstract
Ferroelectric PZT(70/30) thick films were fabricated by the hybrid technique adding the sol coating process to the normal screen-printing process to obtain a good densification. Structural and electrical properties of the thick films with the sol concentration were investigated. The thickness of all thick films spin-coated four times was approximately 80-85 mu m. The relative dielectric constant increased and dielectric loss decreased with increasing the sol concentration, the values of the thick film coated with sol concentration of 1.5 M were 698 and 2.5% at 1 kHz, respectively. And the remanent polarization and dielectric breakdown strength of the thick film coated with sol concentration of 1.5 M were about 38 mu C/cm(2) and 200 kV/cm, respectively. The leakage current densities were less than 10(-8) A/cm(2) at the applied electric field range of 0-100 kV/cm in all thick films. (C) 2007 Elsevier B.V. All rights reserved.
Files in This Item
There are no files associated with this item.
Appears in
Collections
공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Lee, Sung Gap photo

Lee, Sung Gap
대학원 (나노신소재융합공학과)
Read more

Altmetrics

Total Views & Downloads

BROWSE