Cited 44 time in
High-Performance Semiconductors based on Alkoxylnaphthyl End-Capped Oligomers for Organic Thin-Film Transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Zhao, Qinghua | - |
| dc.contributor.author | Kim, Tae Hoon | - |
| dc.contributor.author | Park, Jong Won | - |
| dc.contributor.author | Kim, Seul Ong | - |
| dc.contributor.author | Jung, Sung Ouk | - |
| dc.contributor.author | Kim, Jin Woo | - |
| dc.contributor.author | Ahn, Taek | - |
| dc.contributor.author | Kim, Yun-Hi | - |
| dc.contributor.author | Yi, Mi Hye | - |
| dc.contributor.author | Kwon, Soon-Ki | - |
| dc.date.accessioned | 2022-12-27T05:55:12Z | - |
| dc.date.available | 2022-12-27T05:55:12Z | - |
| dc.date.issued | 2008-12 | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.issn | 1521-4095 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/27180 | - |
| dc.description.abstract | Small-fused acenes with an electron-donating alkoxyl naphthyl end-capper, which can tune the electronic properties and increase stacking by self-assembly, are synthesized by a simple process and fabricated into organic thin film transistors. In particular, hexyloxynaphthalene-end-capped anthracene, AN-ANE (see figure), shows field effect mobility three times that of pentacene under optimized conditions. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
| dc.title | High-Performance Semiconductors based on Alkoxylnaphthyl End-Capped Oligomers for Organic Thin-Film Transistors | - |
| dc.type | Article | - |
| dc.publisher.location | 독일 | - |
| dc.identifier.doi | 10.1002/adma.200800061 | - |
| dc.identifier.scopusid | 2-s2.0-58049176722 | - |
| dc.identifier.wosid | 000262292200043 | - |
| dc.identifier.bibliographicCitation | Advanced Materials, v.20, no.24, pp 4868 - + | - |
| dc.citation.title | Advanced Materials | - |
| dc.citation.volume | 20 | - |
| dc.citation.number | 24 | - |
| dc.citation.startPage | 4868 | - |
| dc.citation.endPage | + | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | HIGH-MOBILITY | - |
| dc.subject.keywordPlus | LARGE-AREA | - |
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