All-solution-processed Organic thin-film transistors using inkjet-printed silver electrodes

Abstract

We report all-solution-processed organic thin-film transistor using inkjet-printed silver electrodes, spin-coated cross-linked poly(4-vinylphenol) (PVP) as a gate dielectric material, and spin-coated 6,13- bis(triisopropylsilylethynyl) pentecene (TIPS-pentacene) as an active layer. Edge-scalloping effect was observed for printed silver source/drain electrodes and analyzed to obtain effective channel length of this device. We obtained a mobility up to 0.08 cm2/Vs, which is as high as that of spin-coated TIPS-pentacene OTFT deposited on conventionally deposited metal and/or insulating layers, without current crowding at source/drain contact. We also studied inkjet-printed TIPS-pentacene OTFT using silver source/drain electrodes printed on thermally grown silicon dioxide gate dielectric layer on heavily doped p-type silicon wafer. This device showed a mobility of 0.06 cm2 /Vs, threshold voltage of -3.4V, subthreshold swing of 2.41V/dec, and on/off ratio of 105. ?The Electrochemical Society.