High-performance organic charge trap flash memory devices based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) pentacene transistors

Abstract

Organic nanofloating gate memory devices were developed based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors (TFTs) embedding gold nanoparticles. The programming/erasing operations showed that the organic memory devices exhibited good programmable memory characteristics that resulted in a gate-voltage controlled reliable threshold voltage shift of the programmed/erased states. The data retention and endurance measurements also showed the reliable nonvolatile memory properties. Solution processes were used for synthesis of the charge trapping elements and TIPS-pentacene TFTs were made by the ink-jet printing technique at low temperatures. Therefore, these processes can readily be adopted in all-printed organic memory devices on flexible substrates. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3435470]