Cited 164 time in
H-Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Seul-ong | - |
| dc.contributor.author | An, Tae Kyu | - |
| dc.contributor.author | Chen, Jun | - |
| dc.contributor.author | Kang, Il | - |
| dc.contributor.author | Kang, So Hee | - |
| dc.contributor.author | Chung, Dae Sung | - |
| dc.contributor.author | Park, Chan Eon | - |
| dc.contributor.author | Kim, Yun-Hi | - |
| dc.contributor.author | Kwon, Soon-Ki | - |
| dc.date.accessioned | 2022-12-27T03:05:37Z | - |
| dc.date.available | 2022-12-27T03:05:37Z | - |
| dc.date.issued | 2011-05 | - |
| dc.identifier.issn | 1616-301X | - |
| dc.identifier.issn | 1616-3028 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/23737 | - |
| dc.description.abstract | Four new quaterthiophene derivatives with end-groups composed of dicyclohexyl ethyl (DCE4T), dicyclohexyl butyl (DCB4T), cyclohexyl ethyl (CE4T), and cyclohexyl butyl (CB4T) were designed. All materials showed high solubility in common organic solvents. UV-vis absorption measurements showed that the quaterthiophene derivatives with asymmetrically substituted cyclohexyl end-groups (CE4T and CB4T) preferred H-type aggregation whereas those with symmetrically substituted cyclohexyl end-groups (DCE4T and DCB4T) preferred J-type aggregation. The molecular structure-dependent packing (H or J) of the new quaterthiophene derivatives was analyzed by grazing-incidence wide-angle X-ray scattering (GIWAXS) measurements. The field-effect mobilities of devices that incorporated the asymmetrical molecules, CE4T and CB4T, were quite high, above 10(-2) cm (2) V-1 s(-1), due to H-aggregation, whereas the fi eld-effect mobilities of devices that incorporated symmetrical molecules, DCE4T and DCB4T, were poor, below 10(-4) cm (2) V-1 s(-1), due to J-aggregation. More importantly, H-aggregation within the thin fi lm provided stable crystalline morphologies in the spin-coated fi lms, and, thus, thin fi lm transistors (TFTs) using cyclohexylated quaterthiophenes yielded highly reproducible transistor performances. The distributions of measured fi eld-effect mobilities in transistors based on cyclohexylated quaterthiophenes with H-aggregation were remarkably narrow. | - |
| dc.format.extent | 8 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | John Wiley & Sons Ltd. | - |
| dc.title | H-Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors | - |
| dc.type | Article | - |
| dc.publisher.location | 독일 | - |
| dc.identifier.doi | 10.1002/adfm.201002367 | - |
| dc.identifier.scopusid | 2-s2.0-79957581335 | - |
| dc.identifier.wosid | 000290530500010 | - |
| dc.identifier.bibliographicCitation | Advanced Functional Materials, v.21, no.9, pp 1616 - 1623 | - |
| dc.citation.title | Advanced Functional Materials | - |
| dc.citation.volume | 21 | - |
| dc.citation.number | 9 | - |
| dc.citation.startPage | 1616 | - |
| dc.citation.endPage | 1623 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | HIGH-PERFORMANCE SEMICONDUCTORS | - |
| dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYER | - |
| dc.subject.keywordPlus | END-CAPPED OLIGOMERS | - |
| dc.subject.keywordPlus | X-RAY-SCATTERING | - |
| dc.subject.keywordPlus | CRYSTAL-STRUCTURE | - |
| dc.subject.keywordPlus | SIDE-CHAIN | - |
| dc.subject.keywordPlus | OLIGOTHIOPHENES | - |
| dc.subject.keywordPlus | POLYMER | - |
| dc.subject.keywordPlus | QUATERTHIOPHENES | - |
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