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Organic semiconductor based on phenylethynyl end-capped anthracene

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dc.contributor.authorKim, Seul-Ong-
dc.contributor.authorLee, Myung Won-
dc.contributor.authorJang, Sang Hun-
dc.contributor.authorPark, So Min-
dc.contributor.authorPark, Jong Won-
dc.contributor.authorPark, Moon-Hak-
dc.contributor.authorKang, So Hee-
dc.contributor.authorKim, Yun-Hi-
dc.contributor.authorSong, Chung Kun-
dc.contributor.authorKwon, Soon-Ki-
dc.date.accessioned2022-12-27T02:54:13Z-
dc.date.available2022-12-27T02:54:13Z-
dc.date.issued2011-09-
dc.identifier.issn0040-6090-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/23571-
dc.description.abstractOrganic semiconductor based on anthracene with phenylethynyl end capping units, which has rigid rod-like structure with high aspect ratio, was synthesized by Sonogashira coupling reaction. The structure of obtained material was confirmed by fourier transform infrared spectroscopy, mass and elemental analysis and its physical properties were characterized by ultraviolet-visible spectroscopy and cyclovoltammetry. 2,6-Bis-phenylethynyl-anthracene (BPEA) has deeper highest occupied molecular orbital level with higher stability as well as high intermolecular pi-pi stacking. The crystalline and morphological properties of BPEA thin film were studied using X-ray diffraction and atomic force microscopy. BPEA forms high long range ordered structure in the film and it exhibited high field effect mobility of 0.42 cm(2) V-1 s(-1) (on/off ratio of 10(7)) with device reproducibility and high oxidation stability. (C) 2011 Elsevier B.V. All rights reserved.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherElsevier Sequoia-
dc.titleOrganic semiconductor based on phenylethynyl end-capped anthracene-
dc.typeArticle-
dc.publisher.location스위스-
dc.identifier.doi10.1016/j.tsf.2011.05.060-
dc.identifier.scopusid2-s2.0-80052107518-
dc.identifier.wosid000295057000064-
dc.identifier.bibliographicCitationThin Solid Films, v.519, no.22, pp 7998 - 8002-
dc.citation.titleThin Solid Films-
dc.citation.volume519-
dc.citation.number22-
dc.citation.startPage7998-
dc.citation.endPage8002-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusHIGH-PERFORMANCE SEMICONDUCTORS-
dc.subject.keywordPlusBIAS STRESS-
dc.subject.keywordPlusPENTACENE-
dc.subject.keywordPlusDERIVATIVES-
dc.subject.keywordPlusOLIGOMERS-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordAuthorOrganic semiconductors-
dc.subject.keywordAuthorAnthracene-
dc.subject.keywordAuthorRod structure-
dc.subject.keywordAuthorOxidation-
dc.subject.keywordAuthorStability-
dc.subject.keywordAuthorField effect mobility-
dc.subject.keywordAuthorReproducibility-
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