Cited 14 time in
Organic semiconductor based on phenylethynyl end-capped anthracene
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Seul-Ong | - |
| dc.contributor.author | Lee, Myung Won | - |
| dc.contributor.author | Jang, Sang Hun | - |
| dc.contributor.author | Park, So Min | - |
| dc.contributor.author | Park, Jong Won | - |
| dc.contributor.author | Park, Moon-Hak | - |
| dc.contributor.author | Kang, So Hee | - |
| dc.contributor.author | Kim, Yun-Hi | - |
| dc.contributor.author | Song, Chung Kun | - |
| dc.contributor.author | Kwon, Soon-Ki | - |
| dc.date.accessioned | 2022-12-27T02:54:13Z | - |
| dc.date.available | 2022-12-27T02:54:13Z | - |
| dc.date.issued | 2011-09 | - |
| dc.identifier.issn | 0040-6090 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/23571 | - |
| dc.description.abstract | Organic semiconductor based on anthracene with phenylethynyl end capping units, which has rigid rod-like structure with high aspect ratio, was synthesized by Sonogashira coupling reaction. The structure of obtained material was confirmed by fourier transform infrared spectroscopy, mass and elemental analysis and its physical properties were characterized by ultraviolet-visible spectroscopy and cyclovoltammetry. 2,6-Bis-phenylethynyl-anthracene (BPEA) has deeper highest occupied molecular orbital level with higher stability as well as high intermolecular pi-pi stacking. The crystalline and morphological properties of BPEA thin film were studied using X-ray diffraction and atomic force microscopy. BPEA forms high long range ordered structure in the film and it exhibited high field effect mobility of 0.42 cm(2) V-1 s(-1) (on/off ratio of 10(7)) with device reproducibility and high oxidation stability. (C) 2011 Elsevier B.V. All rights reserved. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Elsevier Sequoia | - |
| dc.title | Organic semiconductor based on phenylethynyl end-capped anthracene | - |
| dc.type | Article | - |
| dc.publisher.location | 스위스 | - |
| dc.identifier.doi | 10.1016/j.tsf.2011.05.060 | - |
| dc.identifier.scopusid | 2-s2.0-80052107518 | - |
| dc.identifier.wosid | 000295057000064 | - |
| dc.identifier.bibliographicCitation | Thin Solid Films, v.519, no.22, pp 7998 - 8002 | - |
| dc.citation.title | Thin Solid Films | - |
| dc.citation.volume | 519 | - |
| dc.citation.number | 22 | - |
| dc.citation.startPage | 7998 | - |
| dc.citation.endPage | 8002 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | HIGH-PERFORMANCE SEMICONDUCTORS | - |
| dc.subject.keywordPlus | BIAS STRESS | - |
| dc.subject.keywordPlus | PENTACENE | - |
| dc.subject.keywordPlus | DERIVATIVES | - |
| dc.subject.keywordPlus | OLIGOMERS | - |
| dc.subject.keywordPlus | STABILITY | - |
| dc.subject.keywordPlus | MOBILITY | - |
| dc.subject.keywordAuthor | Organic semiconductors | - |
| dc.subject.keywordAuthor | Anthracene | - |
| dc.subject.keywordAuthor | Rod structure | - |
| dc.subject.keywordAuthor | Oxidation | - |
| dc.subject.keywordAuthor | Stability | - |
| dc.subject.keywordAuthor | Field effect mobility | - |
| dc.subject.keywordAuthor | Reproducibility | - |
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