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사파이어 웨이퍼의 ELID랩핑 가공 특성에 관한 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 곽태수 | - |
| dc.contributor.author | 한태성 | - |
| dc.contributor.author | 정명원 | - |
| dc.contributor.author | 김윤지 | - |
| dc.contributor.author | Yosihiro Uehara | - |
| dc.contributor.author | Hitoshi Ohmori | - |
| dc.date.accessioned | 2022-12-27T02:02:52Z | - |
| dc.date.available | 2022-12-27T02:02:52Z | - |
| dc.date.issued | 2012 | - |
| dc.identifier.issn | 1225-9071 | - |
| dc.identifier.issn | 2287-8769 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/22454 | - |
| dc.description.abstract | This study has been focused on application of ELID lapping process for mirror-surface machining of sapphire wafer. Sapphire wafer is a superior material with optic properties of high performance as light transmission, thermal conductivity, hardness and so on. High effective surface machining technology is necessary to use sapphire as various usages. The interval ELID lapping process has been set up for lapping of the sapphire material. According to the ELID lapping experimental results, it shows that 12.5 kg of load for lapping is most pertinent to ELID lapping. the surface of sapphire can be eliminated by metal bonded wheel with micron abrasives and the surface roughness of 60 nmRa can be gotten using grinding wheel of 2,000 mesh in 4.5 um, depth of cut. In this study, the chemical experiments after ELID grinding also has been conducted to check chemical reaction between workpiece and grinding wheel on ELID grinding process. It shows that the chemical reaction has not happened as the results of the chemical experiments. | - |
| dc.format.extent | 5 | - |
| dc.language | 한국어 | - |
| dc.language.iso | KOR | - |
| dc.publisher | 한국정밀공학회 | - |
| dc.title | 사파이어 웨이퍼의 ELID랩핑 가공 특성에 관한 연구 | - |
| dc.title.alternative | A Study on Characteristics of ELID Lapping for Sapphire Wafer Material | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.doi | 10.7736/KSPE.2012.29.12.1285 | - |
| dc.identifier.bibliographicCitation | 한국정밀공학회지, v.29, no.12, pp 1285 - 1289 | - |
| dc.citation.title | 한국정밀공학회지 | - |
| dc.citation.volume | 29 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 1285 | - |
| dc.citation.endPage | 1289 | - |
| dc.identifier.kciid | ART001712363 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.subject.keywordAuthor | Sapphire Wafer (사파이어 웨이퍼) | - |
| dc.subject.keywordAuthor | ELID Grinding (ELID 연삭) | - |
| dc.subject.keywordAuthor | Material Removal Rate (재료제거율) | - |
| dc.subject.keywordAuthor | Interval ELID Lapping (인터벌 ELID랩핑) | - |
| dc.subject.keywordAuthor | Surface Roughness (표면조도) | - |
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