Cited 16 time in
High-speed solution-processed organic single crystal transistors using a novel triisopropylsilylethynyl anthracene derivative
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chung, Dae Sung | - |
| dc.contributor.author | An, Tae Kyu | - |
| dc.contributor.author | Park, Chan Eon | - |
| dc.contributor.author | Yun, Hui-Jun | - |
| dc.contributor.author | Kwon, Soon-Ki | - |
| dc.contributor.author | Kim, Yun-Hi | - |
| dc.date.accessioned | 2022-12-27T01:35:08Z | - |
| dc.date.available | 2022-12-27T01:35:08Z | - |
| dc.date.issued | 2012-11 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/21912 | - |
| dc.description.abstract | A high-quality organic single crystal transistor (OSCT) was fabricated via solution-processing using a novel anthracene derivative (TIPsAntNE). The OSCT fabricated on a surface-modified high-capacitance ZrOx substrate provided a transistor that operated at low voltages with a high mobility up to 4.1 cm(2)/Vs and negligible hysteresis (a V-th shift of <20mV). Importantly, the TIPsAntNE OSCT functioned under a high-frequency AC signal with a gate bias as high as 30 kHz. These are crucial operational requirements for commercial applications of organic transistors. The photoresponsivity (>1 A/W) of the TIPsAntNE single crystal was high over a wide range across the visible spectrum. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764062] | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | High-speed solution-processed organic single crystal transistors using a novel triisopropylsilylethynyl anthracene derivative | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.4764062 | - |
| dc.identifier.scopusid | 2-s2.0-84869067977 | - |
| dc.identifier.wosid | 000311320100061 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.101, no.19 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 101 | - |
| dc.citation.number | 19 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | PERFORMANCE | - |
| dc.subject.keywordPlus | PHOTODETECTORS | - |
| dc.subject.keywordPlus | DIELECTRICS | - |
| dc.subject.keywordPlus | TRANSPORT | - |
| dc.subject.keywordPlus | MOBILITY | - |
| dc.subject.keywordAuthor | high-frequency effects | - |
| dc.subject.keywordAuthor | organic semiconductors | - |
| dc.subject.keywordAuthor | thin film transistors | - |
| dc.subject.keywordAuthor | transistors | - |
| dc.subject.keywordAuthor | visible spectra | - |
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