Cited 2 time in
Fabrication and electrical properties of La8.33Sb(SiO4)(6)O-2 thick films for solid oxide fuel cells
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Dae-Young | - |
| dc.contributor.author | Lee, Sung-Gap | - |
| dc.contributor.author | Jung, Gwang-Ho | - |
| dc.contributor.author | Kim, Yong-Gon | - |
| dc.date.accessioned | 2022-12-27T00:31:58Z | - |
| dc.date.available | 2022-12-27T00:31:58Z | - |
| dc.date.issued | 2013-07-14 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.issn | 1089-7550 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/20581 | - |
| dc.description.abstract | In this study, Sb-substituted La8.33Sb(SiO4)(6)O-2 apatite thick films were fabricated by using a screen printing method and the structural and electrical properties of these materials, with variation in sintering temperature for solid oxide fuel cells were investigated. With increased sintering temperatures, the second phase La2SiO5 phase decreased and the specimens sintered at over 1350 degrees C showed typical X-ray diffraction patterns of apatite polycrystalline structure. The grain size increased and porosity decreased, with increasing sintering temperatures. The thickness of all films was approximately 25-30 mu m. La8.33Sb(SiO4)(6)O-2 thick films, sintered at 1350 degrees C, showed good conductivity and activation energy characteristics at 9.87 x 10(-5) S cm(-1) and 1.24 eV, respectively. (C) 2013 Author(s). | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Fabrication and electrical properties of La8.33Sb(SiO4)(6)O-2 thick films for solid oxide fuel cells | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.4811815 | - |
| dc.identifier.scopusid | 2-s2.0-84880389951 | - |
| dc.identifier.wosid | 000321761600071 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.114, no.2 | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 114 | - |
| dc.citation.number | 2 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | IONIC-CONDUCTIVITY | - |
| dc.subject.keywordPlus | SILICATE | - |
| dc.subject.keywordPlus | GD | - |
| dc.subject.keywordPlus | SM | - |
| dc.subject.keywordPlus | DY | - |
| dc.subject.keywordPlus | ND | - |
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