Synthesis of a Low-Bandgap Fluorinated Donor-Acceptor Copolymer and Its Optoelectronic Application
- Authors
- Yun, Hui-Jun; Hwang, Moon Chan; Park, So Min; Kim, Ran; Chung, Dae Sung; Kim, Yun-Hi; Kwon, Soon-Ki
- Issue Date
- Jul-2013
- Publisher
- American Chemical Society
- Keywords
- polymer; semiconductor; PBDTTT; photodetector; mobility; nanocrystal
- Citation
- ACS Applied Materials & Interfaces, v.5, no.13, pp 6045 - 6053
- Pages
- 9
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- ACS Applied Materials & Interfaces
- Volume
- 5
- Number
- 13
- Start Page
- 6045
- End Page
- 6053
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/20579
- DOI
- 10.1021/am4007935
- ISSN
- 1944-8244
1944-8252
- Abstract
- We demonstrate the synthesis of a new copolymer which is composed of dialkyl thienylated benzodithiophene and perfluororalkyl-carbonyl thienothiophene (DTBDT-TTFO) and the characterization of its optoelectronic properties. The introduction of thienyl groups enabled the extended delocalization of it electrons in the DTBDT-TTFO backbone and efficient intermolecular charge transport as proved by the fairly high field effect mobility of 0.02 cm(2)/(V s). The introduction of perfluororalkyl-carbonyl side chains resulted in a significant red-shift of DTBDT-TTFO in the absorption spectra and a decrease in the HOMO and LUMO levels. The resulting energy levels of DTBDT-TTFO were not satisfactory for solar cell applications, especially in terms of charge separation at the polymer/PCBM interfaces. Rather, the DTBDT-TTFO showed better energy level matching with the colloidal nanocrystals (NCs) of CdSe. A photodetector based on the bulkheterojunction of DTBDT-TTFO and CdSe NCs with coplanar device geometry resulted in a high photoconductive gain (responsivity higher than 1A/W under a low operating voltage of 1 V), possibly arising from electron trapping at CdSe NCs such that the hole can travel along the detector and its surrounding circuit More importantly, the photodetector revealed a time constant of a few hundreds of microseconds, which means that the response speed of the photodetector is fast enough for lag-free imaging applications.
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Collections - 공과대학 > School of Materials Science&Engineering > Journal Articles
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