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Thin Film Morphology Control via a Mixed Solvent System for High-Performance Organic Thin Film Transistors

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dc.contributor.authorAn, Tae Kyu-
dc.contributor.authorPark, So-Min-
dc.contributor.authorNam, Sooji-
dc.contributor.authorHwang, Jaeyeong-
dc.contributor.authorYoo, Seung-Jin-
dc.contributor.authorLee, Min-Jung-
dc.contributor.authorYun, Won Min-
dc.contributor.authorJang, Jaeyoung-
dc.contributor.authorCha, Hyojung-
dc.contributor.authorHwang, Jihun-
dc.contributor.authorPark, Seonuk-
dc.contributor.authorKim, Jiye-
dc.contributor.authorChung, Dae Sung-
dc.contributor.authorKim, Yun-Hi-
dc.contributor.authorKwon, Soon-Ki-
dc.contributor.authorPark, Chan Eon-
dc.date.accessioned2022-12-27T00:22:00Z-
dc.date.available2022-12-27T00:22:00Z-
dc.date.issued2013-09-
dc.identifier.issn1947-2935-
dc.identifier.issn1947-2943-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/20501-
dc.description.abstractThe electrical performance of a thin film in an organic thin film transistor depends on the film morphology. A mixed solvent system was demonstrated to provide a useful method for controlling the morphologies of organic semiconductor layers in organic thin film transistor. To overcome the limitations on solvent properties, control over the morphology of a 2-(6-((2-ethylhexyl)oxy)naphthalen-2-yl)anthracene film using a tetrahydrofuran/chloroform mixed system (with ratio of 1:5 w/w). Here, in an effort to achieve improved the device electrical performance properties for use in organic thin film transistors, we have examined a mixed solvent system that is suitable for the fabrication of organic semiconductors.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Scientific Publishers-
dc.titleThin Film Morphology Control via a Mixed Solvent System for High-Performance Organic Thin Film Transistors-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1166/sam.2013.1566-
dc.identifier.scopusid2-s2.0-84880933923-
dc.identifier.wosid000323356100024-
dc.identifier.bibliographicCitationScience of Advanced Materials, v.5, no.9, pp 1323 - 1327-
dc.citation.titleScience of Advanced Materials-
dc.citation.volume5-
dc.citation.number9-
dc.citation.startPage1323-
dc.citation.endPage1327-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordAuthorOrganic Thin Film Transistor (OTFT)-
dc.subject.keywordAuthorMixed Solvent-
dc.subject.keywordAuthorOrganic Semiconductor-
dc.subject.keywordAuthorMorphology-
dc.subject.keywordAuthorFused Acene-
dc.subject.keywordAuthorCrystallinity-
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