Electrochemical properties of Si film electrodes with TiNi shape memory alloy as a current collector
- Authors
- Cho, Gyu-bong; Kim, Bo-min; Noh, Jung-pil; Im, Yeon-min; Lee, Sang-hun; Kim, Ki-won; Nam, Tae-hyun
- Issue Date
- 15-Nov-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Si electrode; Shape memory alloy; Current collector; Anode; Stress
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.577, pp S190 - S194
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 577
- Start Page
- S190
- End Page
- S194
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/20370
- DOI
- 10.1016/j.jallcom.2011.12.173
- ISSN
- 0925-8388
1873-4669
- Abstract
- The electrochemical and structural properties of Si thin film electrodes using a TiNi shape memory alloy as a current collector (substrate) are investigated with and without annealing. Annealed Si film electrodes exhibit an initial efficiency of 87% and a charge capacity retention (at the 50th cycle) of 85%. XRD results of the annealed Si film electrode during the charge-discharge process reveal the phase transformation (stress accommodation) of the TiNi substrate: cubic TiNi (initial) to monoclinic TiNi (after charge) and back to cubic TiNi (after discharge). SEM results of the annealed Si electrode show a remarkable reduction in structural damage of the Si film as compared to the as-deposited Si film electrode. The good electrochemical performances are ascribed to the high structural stability enhanced by both the post-annealing and stress accommodation of the TiNi substrate. (C) 2012 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.