Detailed Information

Cited 23 time in webofscience Cited 18 time in scopus
Metadata Downloads

Dielectric strength of voidless BaTiO3 films with nano-scale grains fabricated by aerosol deposition

Full metadata record
DC Field Value Language
dc.contributor.authorKim, Hong-Ki-
dc.contributor.authorLee, Seung-Hwan-
dc.contributor.authorKim, Soo In-
dc.contributor.authorLee, Chang Woo-
dc.contributor.authorYoon, Jung Rag-
dc.contributor.authorLee, Sung-Gap-
dc.contributor.authorLee, Young-Hie-
dc.date.accessioned2022-12-26T23:19:24Z-
dc.date.available2022-12-26T23:19:24Z-
dc.date.issued2014-01-07-
dc.identifier.issn0021-8979-
dc.identifier.issn1089-7550-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/19201-
dc.description.abstractIn order to investigate the dielectric strength properties of the BaTiO3 films with nano-scale grains with uniform grain size and no voids, BaTiO3 films were fabricated with a thickness of 1 mu m by an AD process, and the fabricated films were sintered at 800, 900, and 1000 degrees C in air and reducing atmosphere. The films have superior dielectric strength properties due to their uniform grain size and high density without any voids. In addition, based on investigation of the leakage current (intrinsic) properties, it was confirmed that the sintering conditions of the reducing atmosphere largely increase leakage currents due to generated electrons and doubly ionized oxygen vacancies following the Poole-Frenkel emission mechanism, and increased leakage currents flow at grain boundary regions. Therefore, we conclude that the extrinsic breakdown factors should be eliminated for superior dielectric strength properties, and it is important to enhance grain boundaries by doping acceptors and rare-earth elements. (C) 2014 AIP Publishing LLC.-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER INST PHYSICS-
dc.titleDielectric strength of voidless BaTiO3 films with nano-scale grains fabricated by aerosol deposition-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1063/1.4851675-
dc.identifier.scopusid2-s2.0-84892175169-
dc.identifier.wosid000329456300042-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.115, no.1-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume115-
dc.citation.number1-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusFOWLER-NORDHEIM-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusBREAKDOWN-
Files in This Item
There are no files associated with this item.
Appears in
Collections
공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Lee, Sung Gap photo

Lee, Sung Gap
대학원 (나노신소재융합공학과)
Read more

Altmetrics

Total Views & Downloads

BROWSE