Cited 6 time in
Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O-3 Thin Film Applied to Embedded Decoupling Capacitors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Seung-Hwan | - |
| dc.contributor.author | Kim, Hong-Ki | - |
| dc.contributor.author | Kang, Min-Gyu | - |
| dc.contributor.author | Kang, Chong-Yun | - |
| dc.contributor.author | Lee, Sung-Gap | - |
| dc.contributor.author | Lee, Young-Hie | - |
| dc.contributor.author | Yoon, Jung-Rag | - |
| dc.date.accessioned | 2022-12-26T23:04:27Z | - |
| dc.date.available | 2022-12-26T23:04:27Z | - |
| dc.date.issued | 2014-07 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.issn | 1558-0563 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/18908 | - |
| dc.description.abstract | A formed device embedded-type 0402 sized (Ca0.7Sr0.3)(Zr0.8Ti0.2)O-3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 degrees C-125 degrees C, delta C/C = +/- 30 ppm/degrees C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 Omega and 62.39 mu H, respectively. The leakage current density was 0.78 mu A/cm(2) at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O-3 Thin Film Applied to Embedded Decoupling Capacitors | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/LED.2014.2320295 | - |
| dc.identifier.scopusid | 2-s2.0-84903618460 | - |
| dc.identifier.wosid | 000338662100030 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp 777 - 779 | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 35 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 777 | - |
| dc.citation.endPage | 779 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | DIELECTRIC-PROPERTIES | - |
| dc.subject.keywordPlus | FOWLER-NORDHEIM | - |
| dc.subject.keywordAuthor | CSZT | - |
| dc.subject.keywordAuthor | embedded capacitor | - |
| dc.subject.keywordAuthor | FDE | - |
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