Detailed Information

Cited 5 time in webofscience Cited 6 time in scopus
Metadata Downloads

Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O-3 Thin Film Applied to Embedded Decoupling Capacitors

Full metadata record
DC Field Value Language
dc.contributor.authorLee, Seung-Hwan-
dc.contributor.authorKim, Hong-Ki-
dc.contributor.authorKang, Min-Gyu-
dc.contributor.authorKang, Chong-Yun-
dc.contributor.authorLee, Sung-Gap-
dc.contributor.authorLee, Young-Hie-
dc.contributor.authorYoon, Jung-Rag-
dc.date.accessioned2022-12-26T23:04:27Z-
dc.date.available2022-12-26T23:04:27Z-
dc.date.issued2014-07-
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/18908-
dc.description.abstractA formed device embedded-type 0402 sized (Ca0.7Sr0.3)(Zr0.8Ti0.2)O-3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 degrees C-125 degrees C, delta C/C = +/- 30 ppm/degrees C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 Omega and 62.39 mu H, respectively. The leakage current density was 0.78 mu A/cm(2) at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleDevelopment and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O-3 Thin Film Applied to Embedded Decoupling Capacitors-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/LED.2014.2320295-
dc.identifier.scopusid2-s2.0-84903618460-
dc.identifier.wosid000338662100030-
dc.identifier.bibliographicCitationIEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp 777 - 779-
dc.citation.titleIEEE ELECTRON DEVICE LETTERS-
dc.citation.volume35-
dc.citation.number7-
dc.citation.startPage777-
dc.citation.endPage779-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusDIELECTRIC-PROPERTIES-
dc.subject.keywordPlusFOWLER-NORDHEIM-
dc.subject.keywordAuthorCSZT-
dc.subject.keywordAuthorembedded capacitor-
dc.subject.keywordAuthorFDE-
Files in This Item
There are no files associated with this item.
Appears in
Collections
공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Lee, Sung Gap photo

Lee, Sung Gap
대학원 (나노신소재융합공학과)
Read more

Altmetrics

Total Views & Downloads

BROWSE