YBa2Cu3O6+x Semiconductors Fabricated Using the Aerosol Deposition Method for IR Sensors

Abstract

In this study, YBa2Cu3O6+x (YBCO) thick films were investigated for their application in uncooled microbolometers. YBCO powders were prepared using the conventional mixed oxide method and were deposited on an SiO2/Si substrate using the aerosol deposition method (ADM) at room temperature. As a result of thermogravimetry and differential thermal analysis (TG-DTA) of YBCO powder, an endothermic peak was observed at approximately 820 degrees C. The powder was calcined at 880 degrees C. The deposited film were annealed at 600-750 degrees C (O-2:Ar = 1:1, pO(2)) and their structural and electrical properties were investigated at varying annealing temperatures. From X-ray diffraction (XRD) results, all films displayed the typical XRD patterns of the tetragonal phase and the second phase was observed. The thickness of all the YBCO thick films was approximately 15.7 mu m. As a result of the temperature coefficient of resistance (TCR = 1/R*dR/dT), the YBCO thick films annealed at 700 degrees C showed the maximum value of -3.1%/degrees C and all YBCO thick films showed typical NTCR (negative temperature coefficient of resistance) properties, displaying decreased electrical resistance with an increase in temperature.