Dielectric Properties of (Ca0.7Sr0.3)(Zr0.8Ti0.2)O-3 Thin Films with Different Deposition Temperatures

Abstract

In this paper, (Ca0.7Sr0.3)(Zr0.8Ti0.2)O-3 thin films were fabricated by RF-sputtering at various deposition temperatures from 300 degrees C to 700 degrees C to determine the optimal deposition condition. The XRD data confirmed the successful fabrication of crystalline CSZT thin films. Based on the dielectric properties of the fabricated thin films, the optimal deposition temperature was 700 degrees C, which resulted in a film with a relatively high dielectric constant and low dielectric loss (28.4 and 0.006) (at 1 MHz). Moreover, the CSZT thin film deposited at 700 degrees C showed stable dielectric properties at microwave frequencies. With increasing deposition temperature, the roughness of the CSZT thin film increased but the leakage current of the CSZT thin film decreased, simultaneously.